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¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ 0.11 Ultra-low Leakage

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Overview
        ¹«Ë¾ 0.11 ULL½ÓÄÉÁËÂÁ»¥Á¬ÊÖÒÕ £¬1P8M ¼Ü¹¹ £¬Ìṩ1.5V ÄÚºËÆ÷¼þ¼°3.3V ÊäÈëÊä³öÆ÷¼þ £¬¾ß±¸³¬µÍйµçÌØµã £¬Æ÷¼þÌØÕ÷Ioff (pA/um)<0.5 ¡£

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Key Features 
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Applications
- MCU
- IOT


 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ 0.11 ULL flash 

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Overview
        ¹«Ë¾ 0.11 ULL flash ¹¤ÒÕÊÇ»ùÓÚ0.11 ULL¹¤ÒÕǶÈëflash, Âß¼­Æ÷¼þÓëULL¼æÈÝ ¡£Ìṩ³¬µÍ¹¦ºÄÄ£ÄâIP ¡£

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size

 

¿­Ê±|AG(AsiaGaming)ÓÅÖÊÔËÓªÉÌ Application 
- MCU
- IOT

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